| Preparation and Properties of Self-Bonded
Silicon Carbide |
v. N. MULAY, N. K. REDDY AND M.A. IALEEL
Pages : 73-75
DOI : 10.1080/0371750X.1989.10822950 |
| Abstract |
| The preparation and properties of self-bonded silicon carbide (SBSC)
are presented. The properties include Young's modulus (E), bulk
modulus(,..), rigidity modulus (K), Poisson's ratio (a) and electrical
resistivity (p). E, f1. and K for SBSC rods pressed at 76 MN.m-• were
found to be 0.329, 0.422 and 0.122 GN.m-• respectively and p for the
above rods varied from 0.42 to 0.22 ohm.cm at room temperature
and 1000°C respectively with a minimum at 600°C. |
| Full text : Subscribe to Download Full Text |
| [Go Back] |
|
